Аналог (замена) для IPD70P04P4-09

 

 

IPD70P04P4-09 Datasheet (PDF)

1.1. ipd70p04p4-09 ds 10.pdf Size:132K _infineon

IPD70P04P4-09 OptiMOS®-P2 Power-Transistor Product Summary V -40 V DS R 8.9 mΩ DS(on) I -73 A D Features PG-TO252-3-313 • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70P04P4-09 PG-TO252-3-313 4P0409 Maxi

5.1. ipd70n10s3l-12 ds 1 1.pdf Size:176K _infineon

IPD70N10S3L-12 OptiMOS®-T Power-Transistor Product Summary V 100 V DS R 11.5 mW DS(on),max I 70 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N10S3L-12 PG-TO252-3-11 QN10L12

5.2. ipd70n04s3-07 ds 1 0.pdf Size:182K _infineon

IPD70N04S3-07 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 6.0 mΩ DS(on),max I 82 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N04S3-07 PG-TO252-3-11 QN0407 Max

 5.3. ipd70r1k4ce ips70r1k4ce.pdf Size:1056K _infineon

IPD70R1K4CE, IPS70R1K4CE MOSFET DPAK IPAK SL 700V CoolMOSª CE Power Transistor tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh

5.4. ipd70n10s3-12 ds 1 1.pdf Size:175K _infineon

IPD70N10S3-12 OptiMOS®-T Power-Transistor Product Summary V 100 V DS R 11.1 mW DS(on),max I 70 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Max

 5.5. ipd70r2k0ce.pdf Size:949K _infineon

IPD70R2K0CE MOSFET DPAK 700V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

5.6. ipd70n03s4l-04 ds.pdf Size:186K _infineon

IPD70N03S4L-04 OptiMOS®-T2 Power-Transistor Product Summary V 30 V DS R 4.3 mΩ DS(on),max I 70 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD70N03S4L-04

5.7. ipi70r950ce ipd70r950ce ips70r950ce.pdf Size:1320K _infineon

IPI70R950CE, IPD70R950CE, IPS70R950CE MOSFET I²PAK DPAK IPAK SL 700V CoolMOSª CE Power Transistor tab tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS™ CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applicati

5.8. ipd70r600ce.pdf Size:982K _infineon

IPD70R600CE MOSFET DPAK 700V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

5.9. ipd70r2k0ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD70R2K0CE,IIPD70R2K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V

5.10. ipd70r1k4ce.pdf Size:243K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD70R1K4CE,IIPD70R1K4CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT

5.11. ipd70r600ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD70R600CE,IIPD70R600CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT

5.12. ipd70r950ce.pdf Size:242K _inchange_semiconductor

isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT

     

 

Список транзисторов

Обновления

MOSFET: R6007JNX | R6007JNJ | R6007JND3 | R6006KNX | R6006KND3 | R6006JNX | R6006JNJ | R6006JND3 | R6004JNX | R6004JNJ | R6004JND3 | R6003KND3 | R6002END3 | JCS650S | JCS650F | JCS650C