All MOSFET. IPG20N06S4L-11 Datasheet

 

IPG20N06S4L-11 Datasheet and Replacement


   Type Designator: IPG20N06S4L-11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0112 Ohm
   Package: TDSON84
 

 IPG20N06S4L-11 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IPG20N06S4L-11 Datasheet (PDF)

 ..1. Size:157K  infineon
 ipg20n06s4l-11 ds 1 0.pdf pdf_icon

IPG20N06S4L-11

IPG20N06S4L-11OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)11.2mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-11 PG-TDSON-8-4

 0.1. Size:294K  infineon
 ipg20n06s4l-11a.pdf pdf_icon

IPG20N06S4L-11

IPG20N06S4L-11AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 11.2mWID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Typ

 1.1. Size:158K  infineon
 ipg20n06s4l-14 ipg20n06s4l-14 ds 1 0.pdf pdf_icon

IPG20N06S4L-11

IPG20N06S4L-14OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDS4)13.7mWRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S4L-14 PG-TDSON-8-4

 2.1. Size:196K  infineon
 ipg20n06s4l-26a.pdf pdf_icon

IPG20N06S4L-11

IPG20N06S4L-26AOptiMOS-T2 Power-TransistorProduct SummaryVDS 60 VRDS(on),max4) 26mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

SHOW MORE

Datasheet: IPG20N04S4-12 , IPG20N04S4L-07 , IPG20N04S4L-08 , IPG20N04S4L-11 , IPG20N06S2L-35 , IPG20N06S2L-50 , IPG20N06S2L-65 , IPG20N06S4-15 , IRFZ46N , IPG20N06S4L-14 , IPG20N06S4L-26 , IPI100N04S3-03 , IPI100N08S2-07 , IPI100N10S3-05 , IPI100P03P3L-04 , IPI120N04S3-02 , IPI120N06S4-03 .

History: DMTH8012LPSW-13 | WMB90N02TS

Keywords - IPG20N06S4L-11 MOSFET datasheet

 IPG20N06S4L-11 cross reference
 IPG20N06S4L-11 equivalent finder
 IPG20N06S4L-11 lookup
 IPG20N06S4L-11 substitution
 IPG20N06S4L-11 replacement

 

 
Back to Top

 


 
.