All MOSFET. APT8030JN Datasheet

 

APT8030JN Datasheet and Replacement


   Type Designator: APT8030JN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 245 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 725 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT227
 

 APT8030JN substitution

   - MOSFET ⓘ Cross-Reference Search

 

APT8030JN Datasheet (PDF)

 ..1. Size:61K  apt
apt8030jn.pdf pdf_icon

APT8030JN

DGAPT8030JN 800V 27.0A 0.30SAPT8035JN 800V 25.0A 0.35ISOTOP"UL Recognized" File No. E145592 (S)POWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 8030JN 8035JN UNITVDSS Drain-Source Voltage800 800 VoltsID Continuous Drain Cu

 6.1. Size:70K  apt
apt8030jvfr.pdf pdf_icon

APT8030JN

APT8030JVFR800V 25A 0.300FREDFETPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 6.2. Size:67K  apt
apt8030jvr.pdf pdf_icon

APT8030JN

APT8030JVR800V 25A 0.300POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

 7.1. Size:62K  apt
apt8030lvfr.pdf pdf_icon

APT8030JN

APT8030LVFR800V 27A 0.300POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

Datasheet: APT60M90JN , APT8015JVFR , APT8015JVR , APT8018JN , APT8028JVR , APT802R4KN , APT8030B2VFR , APT8030B2VR , IRF3205 , APT8030JVFR , APT8030JVR , APT8030LVFR , APT8030LVR , APT8056BVFR , APT8056BVR , APT8058HVR , APT8065AVR .

Keywords - APT8030JN MOSFET datasheet

 APT8030JN cross reference
 APT8030JN equivalent finder
 APT8030JN lookup
 APT8030JN substitution
 APT8030JN replacement

 

 
Back to Top

 


 
.