IPI023NE7N3G Specs and Replacement
Type Designator: IPI023NE7N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 2420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: TO262
IPI023NE7N3G substitution
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IPI023NE7N3G datasheet
ipp023ne7n3g ipi023ne7n3g.pdf
## ! ! # ! ! TM # A0 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC 1 D Q H35... See More ⇒
ipp023ne7n3 ipi023ne7n31.pdf
## ! ! # ! ! TM # A0 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC 1 D Q H35... See More ⇒
ipp028n08n3g ipi028n08n3g.pdf
IPP028N08N3 G IPI028N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 2.8 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP02CN08N Pb-free lead plating; RoHS compliant Qualified ac... See More ⇒
ipi020n06n.pdf
Type IPI020N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 2.0 mW Superior thermal resistance ID 120 A N-channel QOSS nC 119 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant ... See More ⇒
Detailed specifications: IPI80N06S4L-05, IPI80N06S4L-07, IPI80N08S2-07, IPI80P03P4L-04, IPI80P03P4L-07, IPI90N04S4-02, IPI90N06S4-04, IPI90N06S4L-04, IRF640, IPI024N06N3G, IPI028N08N3G, IPI030N10N3G, IPI032N06N3G, IPI034NE7N3G, IPI037N06L3G, IPI037N08N3G, IPI040N06N3G
Keywords - IPI023NE7N3G MOSFET specs
IPI023NE7N3G cross reference
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IPI023NE7N3G substitution
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