All MOSFET. IPI111N15N3G Datasheet

 

IPI111N15N3G Datasheet and Replacement


   Type Designator: IPI111N15N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 83 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 378 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm
   Package: TO262
 

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IPI111N15N3G Datasheet (PDF)

 ..1. Size:757K  infineon
 ipb108n15n3g ipp111n15n3g ipi111n15n3g.pdf pdf_icon

IPI111N15N3G

IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max (TO263) 10.8 mW Excellent gate charge x R product (FOM)DS(on)ID 83 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JEDE

 3.1. Size:438K  infineon
 ipb108n15n3-g ipp111n15n3-g ipi111n15n3-g.pdf pdf_icon

IPI111N15N3G

IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 10.8mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 83 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JE

 3.2. Size:286K  inchange semiconductor
 ipi111n15n3.pdf pdf_icon

IPI111N15N3G

isc N-Channel MOSFET Transistor IPI111N15N3FEATURESStatic drain-source on-resistance:RDS(on) 11.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSY

 9.1. Size:690K  infineon
 ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf pdf_icon

IPI111N15N3G

IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

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Datasheet: IPI070N08N3G , IPI072N10N3G , IPI075N15N3G , IPI076N12N3G , IPI086N10N3G , IPI100N04S4-H2 , IPI100N08N3G , IPI110N20N3G , K4145 , IPI120N04S4-01 , IPI120N04S4-02 , IPI120N06S4-02 , IPI120N06S4-H1 , IPI126N10N3G , IPI139N08N3G , IPI147N12N3G , IPI180N10N3G .

Keywords - IPI111N15N3G MOSFET datasheet

 IPI111N15N3G cross reference
 IPI111N15N3G equivalent finder
 IPI111N15N3G lookup
 IPI111N15N3G substitution
 IPI111N15N3G replacement

 

 
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