IPI111N15N3G. Аналоги и основные параметры

Наименование производителя: IPI111N15N3G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 214 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 83 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 35 ns

Cossⓘ - Выходная емкость: 378 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0111 Ohm

Тип корпуса: TO262

Аналог (замена) для IPI111N15N3G

- подборⓘ MOSFET транзистора по параметрам

 

IPI111N15N3G даташит

 ..1. Size:757K  infineon
 ipb108n15n3g ipp111n15n3g ipi111n15n3g.pdf pdf_icon

IPI111N15N3G

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max (TO263) 10.8 mW Excellent gate charge x R product (FOM) DS(on) ID 83 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JEDE

 3.1. Size:438K  infineon
 ipb108n15n3-g ipp111n15n3-g ipi111n15n3-g.pdf pdf_icon

IPI111N15N3G

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 10.8 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 83 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JE

 3.2. Size:286K  inchange semiconductor
 ipi111n15n3.pdf pdf_icon

IPI111N15N3G

isc N-Channel MOSFET Transistor IPI111N15N3 FEATURES Static drain-source on-resistance RDS(on) 11.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 9.1. Size:690K  infineon
 ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf pdf_icon

IPI111N15N3G

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

ПОКАЗАТЬ ЕЩЁ

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