All MOSFET. IPI139N08N3G Datasheet

 

IPI139N08N3G Datasheet and Replacement


   Type Designator: IPI139N08N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 353 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0139 Ohm
   Package: TO262
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IPI139N08N3G Datasheet (PDF)

 3.1. Size:496K  infineon
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IPI139N08N3G

IPP139N08N3 G IPI139N08N3 GIPB136N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching R 13.6mDS(on),max (SMD) Optimized technology for DC/DC convertersI 45 AD Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qual

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History: LSF65R570GT | CSD16342Q5A

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