IPI139N08N3G Specs and Replacement

Type Designator: IPI139N08N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 353 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0139 Ohm

Package: TO262

IPI139N08N3G substitution

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IPI139N08N3G datasheet

 3.1. Size:496K  infineon
 ipb136n08n3-g ipp139n08n3-g ipi139n08n3-g.pdf pdf_icon

IPI139N08N3G

IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching R 13.6 m DS(on),max (SMD) Optimized technology for DC/DC converters I 45 A D Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qual... See More ⇒

Detailed specifications: IPI100N08N3G, IPI110N20N3G, IPI111N15N3G, IPI120N04S4-01, IPI120N04S4-02, IPI120N06S4-02, IPI120N06S4-H1, IPI126N10N3G, IRFP260, IPI147N12N3G, IPI180N10N3G, IPI200N15N3G, IPI200N25N3G, IPI26CN10NG, IPI320N20N3G, IPI35CN10NG, IPI50CN10NG

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