IPI147N12N3G Specs and Replacement
Type Designator: IPI147N12N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 304 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0147 Ohm
Package: TO262
IPI147N12N3G substitution
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IPI147N12N3G datasheet
ipb144n12n3g ipi147n12n3g ipp147n12n3g ipp147n12n3 ipi147n12n3 ipb144n12n3.pdf
IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G 3 Power-Transistor Product Summary Features V 1 D R ( 492??6= ?@C>2= =6G6= R 14 7 m - @? >2I R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH... See More ⇒
ipi147n12n3.pdf
isc N-Channel MOSFET Transistor IPI147N12N3 FEATURES Static drain-source on-resistance RDS(on) 14.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
Detailed specifications: IPI110N20N3G, IPI111N15N3G, IPI120N04S4-01, IPI120N04S4-02, IPI120N06S4-02, IPI120N06S4-H1, IPI126N10N3G, IPI139N08N3G, 4435, IPI180N10N3G, IPI200N15N3G, IPI200N25N3G, IPI26CN10NG, IPI320N20N3G, IPI35CN10NG, IPI50CN10NG, IPI50R140CP
Keywords - IPI147N12N3G MOSFET specs
IPI147N12N3G cross reference
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IPI147N12N3G substitution
IPI147N12N3G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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