IPI180N10N3G Datasheet and Replacement
Type Designator: IPI180N10N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 237 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO262
IPI180N10N3G substitution
IPI180N10N3G Datasheet (PDF)
ipp180n10n3-g ipi180n10n3-g.pdf

IPP180N10N3 GIPI180N10N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 18mDS(on),max TO-263 Excellent gate charge x R product (FOM)DS(on)I 43 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applicatio
ipi180n10n3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI180N10N3FEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
Datasheet: IPI111N15N3G , IPI120N04S4-01 , IPI120N04S4-02 , IPI120N06S4-02 , IPI120N06S4-H1 , IPI126N10N3G , IPI139N08N3G , IPI147N12N3G , AON7410 , IPI200N15N3G , IPI200N25N3G , IPI26CN10NG , IPI320N20N3G , IPI35CN10NG , IPI50CN10NG , IPI50R140CP , IPI50R199CP .
History: IRF9358PBF | IPP80N04S2-04 | AP3P050M | VB1106K | STP20NF06L | 2SK1565 | CEA6426
Keywords - IPI180N10N3G MOSFET datasheet
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History: IRF9358PBF | IPP80N04S2-04 | AP3P050M | VB1106K | STP20NF06L | 2SK1565 | CEA6426



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