All MOSFET. IPI180N10N3G Datasheet

 

IPI180N10N3G Datasheet and Replacement


   Type Designator: IPI180N10N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO262
 

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IPI180N10N3G Datasheet (PDF)

 ..1. Size:559K  infineon
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IPI180N10N3G

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 3.1. Size:299K  infineon
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IPI180N10N3G

IPP180N10N3 GIPI180N10N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 18mDS(on),max TO-263 Excellent gate charge x R product (FOM)DS(on)I 43 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applicatio

 3.2. Size:261K  inchange semiconductor
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IPI180N10N3G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI180N10N3FEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

Datasheet: IPI111N15N3G , IPI120N04S4-01 , IPI120N04S4-02 , IPI120N06S4-02 , IPI120N06S4-H1 , IPI126N10N3G , IPI139N08N3G , IPI147N12N3G , SPP20N60C3 , IPI200N15N3G , IPI200N25N3G , IPI26CN10NG , IPI320N20N3G , IPI35CN10NG , IPI50CN10NG , IPI50R140CP , IPI50R199CP .

History: SP8K31FRA | CPH6434

Keywords - IPI180N10N3G MOSFET datasheet

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