All MOSFET. IPI50R299CP Datasheet

 

IPI50R299CP MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPI50R299CP
   Marking Code: 5R299P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm
   Package: TO262

 IPI50R299CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI50R299CP Datasheet (PDF)

 ..1. Size:535K  infineon
ipi50r299cp.pdf

IPI50R299CP
IPI50R299CP

IPI50R299CPCIMOSE #:A0

 ..2. Size:286K  inchange semiconductor
ipi50r299cp.pdf

IPI50R299CP
IPI50R299CP

isc N-Channel MOSFET Transistor IPI50R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 7.1. Size:547K  infineon
ipi50r250cp.pdf

IPI50R299CP
IPI50R299CP

IPI50R250CPCIMOS #:A0

 7.2. Size:270K  inchange semiconductor
ipi50r250cp.pdf

IPI50R299CP
IPI50R299CP

isc N-Channel MOSFET Transistor IPI50R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 8.1. Size:2917K  infineon
ipi50r380ce.pdf

IPI50R299CP
IPI50R299CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S

 8.2. Size:537K  infineon
ipi50r140cp.pdf

IPI50R299CP
IPI50R299CP

IPI50R140CPCIMOS #:A0

 8.3. Size:546K  infineon
ipi50r350cp rev20a.pdf

IPI50R299CP
IPI50R299CP

IPI50R350CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 550 V!0 U )DK:GH ;>H / L ., + gR 0. 50 DS(on) maxU 2 AHF6 ADK HMU -7 ;F:: A:69 EA6H>C6CH PGTO2621)U . I6Ai;>:9 688DF9>CH8=

 8.4. Size:547K  infineon
ipi50r399cp rev20.pdf

IPI50R299CP
IPI50R299CP

IPI50R399CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 560 V!0 V )DL:HI ;>I / M ., + gR 0. 99 DS(on) maxV 2 AIG6 ADL INV -7 ;G:: A:69 EA6I>C6CI PGTO2621)V . J6Ai;>:9 688DG9>CI8=>C

 8.5. Size:536K  infineon
ipi50r199cp.pdf

IPI50R299CP
IPI50R299CP

IPI50R199CPCIMOSE #:A0

 8.6. Size:287K  inchange semiconductor
ipi50r399cp.pdf

IPI50R299CP
IPI50R299CP

isc N-Channel MOSFET Transistor IPI50R399CPFEATURESStatic drain-source on-resistance:RDS(on) 0.399Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 8.7. Size:286K  inchange semiconductor
ipi50r140cp.pdf

IPI50R299CP
IPI50R299CP

isc N-Channel MOSFET Transistor IPI50R140CPFEATURESStatic drain-source on-resistance:RDS(on) 0.14Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 8.8. Size:287K  inchange semiconductor
ipi50r350cp.pdf

IPI50R299CP
IPI50R299CP

isc N-Channel MOSFET Transistor IPI50R350CPFEATURESStatic drain-source on-resistance:RDS(on) 0.35Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 8.9. Size:208K  inchange semiconductor
ipi50r199cp.pdf

IPI50R299CP
IPI50R299CP

Isc N-Channel MOSFET Transistor IPI50R199CPFEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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