IPI50R299CP - описание и поиск аналогов

IPI50R299CP C IMOSE # A0

isc N-Channel MOSFET Transistor IPI50R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

IPI50R250CP C IMOS # A0

isc N-Channel MOSFET Transistor IPI50R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (S

IPI50R140CP C IMOS # A0

IPI50R350CP CoolMOSTM Power Transistor Product Summary Features V @Tjmax 550 V !0 U )DK GH ;>H / L . , + g R 0. 50 DS(on) max U 2 AHF6 ADK HM U -7 ;F A 69 EA6H>C6CH PG TO262 1) U . I6Ai;> 9 688DF9>CH8=

IPI50R399CP CoolMOSTM Power Transistor Product Summary Features V @Tjmax 560 V !0 V )DL HI ;>I / M . , + g R 0. 99 DS(on) max V 2 AIG6 ADL IN V -7 ;G A 69 EA6I>C6CI PG TO262 1) V . J6Ai;> 9 688DG9>CI8=>C

IPI50R199CP C IMOSE # A0

isc N-Channel MOSFET Transistor IPI50R399CP FEATURES Static drain-source on-resistance RDS(on) 0.399 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

isc N-Channel MOSFET Transistor IPI50R140CP FEATURES Static drain-source on-resistance RDS(on) 0.14 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

isc N-Channel MOSFET Transistor IPI50R350CP FEATURES Static drain-source on-resistance RDS(on) 0.35 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

Isc N-Channel MOSFET Transistor IPI50R199CP FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V