IPI530N15N3G Datasheet and Replacement
Type Designator: IPI530N15N3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: TO262
IPI530N15N3G substitution
IPI530N15N3G Datasheet (PDF)
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ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf

IPB530N15N3 G IPD530N15N3 GIPI530N15N3 G IPP530N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 53 mW Excellent gate charge x R product (FOM)DS(on)ID 21 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to
ipi530n15n3.pdf

isc N-Channel MOSFET Transistor IPI530N15N3FEATURESStatic drain-source on-resistance:RDS(on) 53mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Datasheet: IPI50CN10NG , IPI50R140CP , IPI50R199CP , IPI50R250CP , IPI50R299CP , IPI50R350CP , IPI50R380CE , IPI50R399CP , 20N50 , IPI600N25N3G , IPI60R099CP , IPI60R099CPA , IPI60R125CP , IPI60R165CP , IPI60R190C6 , IPI60R199CP , IPI60R250CP .
History: IPD60R1K5CE
Keywords - IPI530N15N3G MOSFET datasheet
IPI530N15N3G cross reference
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IPI530N15N3G substitution
IPI530N15N3G replacement
History: IPD60R1K5CE



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