All MOSFET. IPI60R199CP Datasheet

 

IPI60R199CP MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPI60R199CP
   Marking Code: 6R199P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: TO262

 IPI60R199CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI60R199CP Datasheet (PDF)

 ..1. Size:544K  infineon
 ipi60r199cp.pdf

IPI60R199CP IPI60R199CP

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 ..2. Size:286K  inchange semiconductor
 ipi60r199cp.pdf

IPI60R199CP IPI60R199CP

isc N-Channel MOSFET Transistor IPI60R199CPFEATURESStatic drain-source on-resistance:RDS(on) 0.199Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 0.1. Size:550K  infineon
 ipi60r199cpa.pdf

IPI60R199CP IPI60R199CP

IPI60R199CPCIMOS #:A0:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compoundPGTO262 ::7!"% #

 6.1. Size:1495K  infineon
 ipi60r190c6.pdf

IPI60R199CP IPI60R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according

 6.2. Size:1214K  infineon
 ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf

IPI60R199CP IPI60R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to

 6.3. Size:264K  inchange semiconductor
 ipi60r190c6.pdf

IPI60R199CP IPI60R199CP

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPI60R190C6FEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

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