IPI60R199CP Specs and Replacement
Type Designator: IPI60R199CP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 72 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
Package: TO262
IPI60R199CP substitution
- MOSFET ⓘ Cross-Reference Search
IPI60R199CP datasheet
ipi60r199cp.pdf
003 6 71 12 45 6 78 9 1 8 8 8 1 8 F OO G H _>D r M(0 ] [ U R , L !#% ' & -$ " &'" #)*+, $ ( ! s>D A , [@ q ^q t i L (0 ./0/ $ ! 10$ ! 0 2 & & u$!8 b v ? L ... See More ⇒
ipi60r199cp.pdf
isc N-Channel MOSFET Transistor IPI60R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
ipi60r199cpa.pdf
IPI60R199CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262 7!"% # ... See More ⇒
ipi60r190c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according... See More ⇒
Detailed specifications: IPI50R399CP, IPI530N15N3G, IPI600N25N3G, IPI60R099CP, IPI60R099CPA, IPI60R125CP, IPI60R165CP, IPI60R190C6, IRF1407, IPI60R250CP, IPI60R280C6, IPI60R299CP, IPI60R380C6, IPI60R385CP, IPI60R520CP, IPI60R600CP, IPI65R280C6
Keywords - IPI60R199CP MOSFET specs
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IPI60R199CP substitution
IPI60R199CP replacement
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