All MOSFET. IPI90R1K2C3 Datasheet

 

IPI90R1K2C3 Datasheet and Replacement


   Type Designator: IPI90R1K2C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO262
 

 IPI90R1K2C3 substitution

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IPI90R1K2C3 Datasheet (PDF)

 ..1. Size:260K  infineon
 ipi90r1k2c3.pdf pdf_icon

IPI90R1K2C3

IPI90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 900V

 6.1. Size:254K  infineon
 ipi90r1k0c3.pdf pdf_icon

IPI90R1K2C3

IPI90R1K0C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 1.0DS(on),max J Extreme dv/dt ratedQ 34 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90

 8.1. Size:259K  infineon
 ipi90r500c3.pdf pdf_icon

IPI90R1K2C3

IPI90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90

 8.2. Size:253K  infineon
 ipi90r340c3.pdf pdf_icon

IPI90R1K2C3

IPI90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO262 (I2Pak)PG-TO262DS

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Datasheet: IPI65R280C6 , IPI65R380C6 , IPI65R600C6 , IPI65R660CFD , IPI70N04S4-06 , IPI80CN10NG , IPI80N04S4-03 , IPI90R1K0C3 , IRF520 , IPI90R340C3 , IPI90R500C3 , IPI90R800C3 , IPL60R199CP , IPL60R299CP , IPL60R385CP , IPP100N04S2-04 , IPP100N04S2L-03 .

History: 2N5486 | 2SK1517

Keywords - IPI90R1K2C3 MOSFET datasheet

 IPI90R1K2C3 cross reference
 IPI90R1K2C3 equivalent finder
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 IPI90R1K2C3 substitution
 IPI90R1K2C3 replacement

 

 
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