IPI90R1K2C3. Аналоги и основные параметры

Наименование производителя: IPI90R1K2C3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 35 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm

Тип корпуса: TO262

Аналог (замена) для IPI90R1K2C3

- подборⓘ MOSFET транзистора по параметрам

 

IPI90R1K2C3 даташит

 ..1. Size:260K  infineon
 ipi90r1k2c3.pdf pdf_icon

IPI90R1K2C3

IPI90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262 Ultra low gate charge CoolMOS 900V

 6.1. Size:254K  infineon
 ipi90r1k0c3.pdf pdf_icon

IPI90R1K2C3

IPI90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 1.0 DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262 Ultra low gate charge CoolMOS 90

 8.1. Size:259K  infineon
 ipi90r500c3.pdf pdf_icon

IPI90R1K2C3

IPI90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.5 DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262 Ultra low gate charge CoolMOS 90

 8.2. Size:253K  infineon
 ipi90r340c3.pdf pdf_icon

IPI90R1K2C3

IPI90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 0.34 DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO262 (I2Pak) PG-TO262 DS

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IPI65R280C6, IPI65R380C6, IPI65R600C6, IPI65R660CFD, IPI70N04S4-06, IPI80CN10NG, IPI80N04S4-03, IPI90R1K0C3, 75N75, IPI90R340C3, IPI90R500C3, IPI90R800C3, IPL60R199CP, IPL60R299CP, IPL60R385CP, IPP100N04S2-04, IPP100N04S2L-03