IPI90R800C3 Specs and Replacement

Type Designator: IPI90R800C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO262

IPI90R800C3 substitution

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IPI90R800C3 datasheet

 ..1. Size:254K  infineon
 ipi90r800c3.pdf pdf_icon

IPI90R800C3

IPI90R800C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.8 DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262 Ultra low gate charge CoolMOS 90... See More ⇒

 8.1. Size:259K  infineon
 ipi90r500c3.pdf pdf_icon

IPI90R800C3

IPI90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.5 DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262 Ultra low gate charge CoolMOS 90... See More ⇒

 8.2. Size:253K  infineon
 ipi90r340c3.pdf pdf_icon

IPI90R800C3

IPI90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 0.34 DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO262 (I2Pak) PG-TO262 DS... See More ⇒

 8.3. Size:254K  infineon
 ipi90r1k0c3.pdf pdf_icon

IPI90R800C3

IPI90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 1.0 DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262 Ultra low gate charge CoolMOS 90... See More ⇒

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Detailed specifications: IPI65R660CFD, IPI70N04S4-06, IPI80CN10NG, IPI80N04S4-03, IPI90R1K0C3, IPI90R1K2C3, IPI90R340C3, IPI90R500C3, STP65NF06, IPL60R199CP, IPL60R299CP, IPL60R385CP, IPP100N04S2-04, IPP100N04S2L-03, IPP100N04S3-03, IPP100N06S2-05, IPP100N06S2L-05

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.