Справочник MOSFET. IPI90R800C3

 

IPI90R800C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPI90R800C3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 52 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IPI90R800C3

 

 

IPI90R800C3 Datasheet (PDF)

 ..1. Size:254K  infineon
 ipi90r800c3.pdf

IPI90R800C3 IPI90R800C3

IPI90R800C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.8DS(on),max J Extreme dv/dt ratedQ 42 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90

 8.1. Size:259K  infineon
 ipi90r500c3.pdf

IPI90R800C3 IPI90R800C3

IPI90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90

 8.2. Size:253K  infineon
 ipi90r340c3.pdf

IPI90R800C3 IPI90R800C3

IPI90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO262 (I2Pak)PG-TO262DS

 8.3. Size:254K  infineon
 ipi90r1k0c3.pdf

IPI90R800C3 IPI90R800C3

IPI90R1K0C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 1.0DS(on),max J Extreme dv/dt ratedQ 34 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 90

 8.4. Size:260K  infineon
 ipi90r1k2c3.pdf

IPI90R800C3 IPI90R800C3

IPI90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262 Ultra low gate chargeCoolMOS 900V

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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