IPL60R199CP Specs and Replacement

Type Designator: IPL60R199CP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm

Package: THINPAK8X8

IPL60R199CP substitution

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IPL60R199CP datasheet

 ..1. Size:1597K  infineon
ipl60r199cp.pdf pdf_icon

IPL60R199CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS CP Power Transistor IPL60R199CP 1 Description The CoolMOS CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely... See More ⇒

 7.1. Size:1325K  infineon
ipl60r185p7.pdf pdf_icon

IPL60R199CP

IPL60R185P7 MOSFET ThinPAK 8x8 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒

 7.2. Size:1634K  infineon
ipl60r180p6.pdf pdf_icon

IPL60R199CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R180P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R180P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

 7.3. Size:1316K  infineon
ipl60r125p7.pdf pdf_icon

IPL60R199CP

IPL60R125P7 MOSFET ThinPAK 8x8 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒

Detailed specifications: IPI70N04S4-06, IPI80CN10NG, IPI80N04S4-03, IPI90R1K0C3, IPI90R1K2C3, IPI90R340C3, IPI90R500C3, IPI90R800C3, IRF1405, IPL60R299CP, IPL60R385CP, IPP100N04S2-04, IPP100N04S2L-03, IPP100N04S3-03, IPP100N06S2-05, IPP100N06S2L-05, IPP100N08S2-07

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