All MOSFET. IPL60R199CP Datasheet

 

IPL60R199CP Datasheet and Replacement


   Type Designator: IPL60R199CP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: THINPAK8X8
 

 IPL60R199CP substitution

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IPL60R199CP Datasheet (PDF)

 ..1. Size:1597K  infineon
ipl60r199cp.pdf pdf_icon

IPL60R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CP600V CoolMOS CP Power TransistorIPL60R199CP Data SheetRev. 2.0, 2010-10-01Final Industrial & Multimarket600V CoolMOS CP Power Transistor IPL60R199CP1 DescriptionThe CoolMOS CP series offers devices which provide all benefits of a fastswitching SJ MOSFET while not sacrificing ease of use. Extremely

 7.1. Size:1325K  infineon
ipl60r185p7.pdf pdf_icon

IPL60R199CP

IPL60R185P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

 7.2. Size:1634K  infineon
ipl60r180p6.pdf pdf_icon

IPL60R199CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R180P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R180P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.3. Size:1316K  infineon
ipl60r125p7.pdf pdf_icon

IPL60R199CP

IPL60R125P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

Datasheet: IPI70N04S4-06 , IPI80CN10NG , IPI80N04S4-03 , IPI90R1K0C3 , IPI90R1K2C3 , IPI90R340C3 , IPI90R500C3 , IPI90R800C3 , NCEP15T14 , IPL60R299CP , IPL60R385CP , IPP100N04S2-04 , IPP100N04S2L-03 , IPP100N04S3-03 , IPP100N06S2-05 , IPP100N06S2L-05 , IPP100N08S2-07 .

Keywords - IPL60R199CP MOSFET datasheet

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