APT8065BVFR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT8065BVFR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 280
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 150
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65
Ohm
Package:
TO247
APT8065BVFR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT8065BVFR
Datasheet (PDF)
..1. Size:63K apt
apt8065bvfr.pdf 
APT8065BVFR800V 13A 0.650POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
..2. Size:376K inchange semiconductor
apt8065bvfr.pdf
isc N-Channel MOSFET Transistor APT8065BVFRFEATURESDrain Current I =13A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
5.1. Size:60K apt
apt8065bvr.pdf
APT8065BVR800V 13A 0.650POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
5.2. Size:376K inchange semiconductor
apt8065bvr.pdf
isc N-Channel MOSFET Transistor APT8065BVRFEATURESDrain Current I =13A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
7.1. Size:63K apt
apt8065svr.pdf
APT8065SVR800V 13A 0.650POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
7.2. Size:60K apt
apt8065avr.pdf
APT8065AVR800V 11.5A 0.650POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
7.3. Size:60K apt
apt8065.pdf
APT8065AVR800V 11.5A 0.650POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
Datasheet: APT8030JVFR
, APT8030JVR
, APT8030LVFR
, APT8030LVR
, APT8056BVFR
, APT8056BVR
, APT8058HVR
, APT8065AVR
, IRFZ44
, APT8065BVR
, APT8065SVR
, APT8067HVR
, APT8075BN
, APT8075BVR
, BF1100
, BF1100R
, BF1100WR
.
