IPP77N06S2-12 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP77N06S2-12
Marking Code: 2N0612
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 77 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 460 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO220
IPP77N06S2-12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP77N06S2-12 Datasheet (PDF)
ipp77n06s2-12 ipb77n06s2-12.pdf
IPB77N06S2-12IPP77N06S2-12OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 11.7mDS(on),max Automotive AEC Q101 qualifiedI 77 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedTyp
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CS25N06C4 | MMBFJ175L | CS220N04A8H
History: CS25N06C4 | MMBFJ175L | CS220N04A8H
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