IPP77N06S2-12 Specs and Replacement

Type Designator: IPP77N06S2-12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 158 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 77 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO220

IPP77N06S2-12 substitution

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IPP77N06S2-12 datasheet

 ..1. Size:155K  infineon
 ipp77n06s2-12 ipb77n06s2-12.pdf pdf_icon

IPP77N06S2-12

IPB77N06S2-12 IPP77N06S2-12 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 11.7 m DS(on),max Automotive AEC Q101 qualified I 77 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Typ... See More ⇒

Detailed specifications: IPP45P03P4L-11, IPP47N10S-33, IPP47N10SL-26, IPP50N10S3L-16, IPP70N04S3-07, IPP70N10S3-12, IPP70N10S3L-12, IPP70N10SL-16, IRF540, IPP80N03S4L-03, IPP80N03S4L-04, IPP80N04S2-04, IPP80N04S2-H4, IPP80N04S2L-03, IPP80N04S3-03, IPP80N04S3-04, IPP80N04S3-06

Keywords - IPP77N06S2-12 MOSFET specs

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