All MOSFET. IPP77N06S2-12 Datasheet

 

IPP77N06S2-12 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP77N06S2-12
   Marking Code: 2N0612
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 158 W
   Maximum Drain-Source Voltage |Vds|: 55 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 77 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 45 nC
   Rise Time (tr): 27 nS
   Drain-Source Capacitance (Cd): 460 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
   Package: TO220

 IPP77N06S2-12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP77N06S2-12 Datasheet (PDF)

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 ipp77n06s2-12 ipb77n06s2-12.pdf

IPP77N06S2-12 IPP77N06S2-12

IPB77N06S2-12IPP77N06S2-12OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 11.7mDS(on),max Automotive AEC Q101 qualifiedI 77 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedTyp

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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