All MOSFET. IPP80N06S2L-11 Datasheet

 

IPP80N06S2L-11 Datasheet and Replacement


   Type Designator: IPP80N06S2L-11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 585 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO220
 

 IPP80N06S2L-11 substitution

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IPP80N06S2L-11 Datasheet (PDF)

 ..1. Size:132K  infineon
 ipb80n06s2l-11 ipp80n06s2l-11 ipi80n06s2l-11 ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf pdf_icon

IPP80N06S2L-11

IPB80N06S2L-11IPP80N06S2L-11, IPI80N06S2L-11OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 10.7mWDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra lo

 2.1. Size:158K  infineon
 ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf pdf_icon

IPP80N06S2L-11

IPB80N06S2L-05IPI80N06S2L-05, IPP80N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.5mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l

 2.2. Size:155K  infineon
 ipb80n06s2l-09 ipp80n06s2l-09 ipp80n06s2l-09 ipb80n06s2l-09.pdf pdf_icon

IPP80N06S2L-11

IPB80N06S2L-09IPP80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 8.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

 2.3. Size:155K  infineon
 ipb80n06s2l-07 ipp80n06s2l-07 ipp80n06s2l-07 ipb80n06s2l-07.pdf pdf_icon

IPP80N06S2L-11

IPB80N06S2L-07IPP80N06S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

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Datasheet: IPP80N06S2-07 , IPP80N06S2-08 , IPP80N06S2-09 , IPP80N06S2-H5 , IPP80N06S2L-05 , IPP80N06S2L-06 , IPP80N06S2L-07 , IPP80N06S2L-09 , 7N65 , IPP80N06S2L-H5 , IPP80N06S4-05 , IPP80N06S4-07 , IPP80N06S4L-05 , IPP80N06S4L-07 , IPP80N08S2-07 , IPP80N08S2L-07 , IPP80P03P4L-04 .

History: 2N3382 | SM4028NSUC-TRG | IRF9130SMD | IPD60R600P7S | FDPF33N25TRDTU | SMK1625FJ | IRFHM8326

Keywords - IPP80N06S2L-11 MOSFET datasheet

 IPP80N06S2L-11 cross reference
 IPP80N06S2L-11 equivalent finder
 IPP80N06S2L-11 lookup
 IPP80N06S2L-11 substitution
 IPP80N06S2L-11 replacement

 

 
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