IPP015N04NG MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP015N04NG
Marking Code: 015N04N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 188 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 4000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: TO220
IPP015N04NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP015N04NG Datasheet (PDF)
ipp015n04ng ipb015n04ng.pdf
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ipp015n04n ipb015n04n.pdf
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ipp015n04n6 ipb015n04n6.pdf
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ipp015n04n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP015N04NIIPP015N04NFEATURESStatic drain-source on-resistance:RDS(on) 1.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 12N70KG-TF3T-T | WMK040N08HGS | FDC6302P | GSM4822WS | SE10060A | MDD7N25RH | FDC608PZ
History: 12N70KG-TF3T-T | WMK040N08HGS | FDC6302P | GSM4822WS | SE10060A | MDD7N25RH | FDC608PZ
LIST
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918