IPP015N04NG Specs and Replacement

Type Designator: IPP015N04NG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 4000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO220

IPP015N04NG substitution

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IPP015N04NG datasheet

 ..1. Size:673K  infineon
 ipp015n04ng ipb015n04ng.pdf pdf_icon

IPP015N04NG

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 4.1. Size:670K  infineon
 ipp015n04n ipb015n04n.pdf pdf_icon

IPP015N04NG

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 4.2. Size:670K  infineon
 ipp015n04n6 ipb015n04n6.pdf pdf_icon

IPP015N04NG

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 4.3. Size:245K  inchange semiconductor
 ipp015n04n.pdf pdf_icon

IPP015N04NG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP015N04N IIPP015N04N FEATURES Static drain-source on-resistance RDS(on) 1.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX... See More ⇒

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Detailed specifications: IPP80N06S4L-07, IPP80N08S2-07, IPP80N08S2L-07, IPP80P03P4L-04, IPP80P03P4L-07, IPP90N04S4-02, IPP90N06S4-04, IPP90N06S4L-04, SPP20N60C3, IPP023N04NG, IPP023NE7N3G, IPP024N06N3G, IPP028N08N3G, IPP030N10N3G, IPP032N06N3G, IPP034N03LG, IPP034NE7N3G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.