IPP034N03LG Specs and Replacement

Type Designator: IPP034N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.4 nS

Cossⓘ - Output Capacitance: 1400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: TO220

IPP034N03LG substitution

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IPP034N03LG datasheet

 ..1. Size:725K  infineon
 ipp034n03lg ipb034n03lg.pdf pdf_icon

IPP034N03LG

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) ... See More ⇒

 4.1. Size:726K  infineon
 ipp034n03l .pdf pdf_icon

IPP034N03LG

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) ... See More ⇒

 4.2. Size:723K  infineon
 ipb034n03l ipp034n03l.pdf pdf_icon

IPP034N03LG

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) ... See More ⇒

 4.3. Size:246K  inchange semiconductor
 ipp034n03l.pdf pdf_icon

IPP034N03LG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP034N03L IIPP034N03L FEATURES Static drain-source on-resistance RDS(on) 3.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE ... See More ⇒

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Detailed specifications: IPP90N06S4L-04, IPP015N04NG, IPP023N04NG, IPP023NE7N3G, IPP024N06N3G, IPP028N08N3G, IPP030N10N3G, IPP032N06N3G, IRF1010E, IPP034NE7N3G, IPP037N06L3G, IPP037N08N3G, IPP039N04LG, IPP040N06N3G, IPP041N04NG, IPP041N12N3G, IPP042N03LG

Keywords - IPP034N03LG MOSFET specs

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