All MOSFET. IPP034N03LG Datasheet

 

IPP034N03LG Datasheet and Replacement


   Type Designator: IPP034N03LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: TO220
 

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IPP034N03LG Datasheet (PDF)

 ..1. Size:725K  infineon
ipp034n03lg ipb034n03lg.pdf pdf_icon

IPP034N03LG

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 4.1. Size:726K  infineon
ipp034n03l .pdf pdf_icon

IPP034N03LG

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 4.2. Size:723K  infineon
ipb034n03l ipp034n03l.pdf pdf_icon

IPP034N03LG

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 4.3. Size:246K  inchange semiconductor
ipp034n03l.pdf pdf_icon

IPP034N03LG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP034N03LIIPP034N03LFEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

Datasheet: IPP90N06S4L-04 , IPP015N04NG , IPP023N04NG , IPP023NE7N3G , IPP024N06N3G , IPP028N08N3G , IPP030N10N3G , IPP032N06N3G , IRF530 , IPP034NE7N3G , IPP037N06L3G , IPP037N08N3G , IPP039N04LG , IPP040N06N3G , IPP041N04NG , IPP041N12N3G , IPP042N03LG .

History: SSD9973 | IRLZ34SPBF | TMP160N10A | STB2N62K3 | WSD20L70DN | SI7270DP | SFP630

Keywords - IPP034N03LG MOSFET datasheet

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