IPP034N03LG. Аналоги и основные параметры

Наименование производителя: IPP034N03LG

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 94 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.4 ns

Cossⓘ - Выходная емкость: 1400 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm

Тип корпуса: TO220

Аналог (замена) для IPP034N03LG

- подборⓘ MOSFET транзистора по параметрам

 

IPP034N03LG даташит

 ..1. Size:725K  infineon
 ipp034n03lg ipb034n03lg.pdf pdf_icon

IPP034N03LG

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 4.1. Size:726K  infineon
 ipp034n03l .pdf pdf_icon

IPP034N03LG

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 4.2. Size:723K  infineon
 ipb034n03l ipp034n03l.pdf pdf_icon

IPP034N03LG

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 4.3. Size:246K  inchange semiconductor
 ipp034n03l.pdf pdf_icon

IPP034N03LG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP034N03L IIPP034N03L FEATURES Static drain-source on-resistance RDS(on) 3.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IPP90N06S4L-04, IPP015N04NG, IPP023N04NG, IPP023NE7N3G, IPP024N06N3G, IPP028N08N3G, IPP030N10N3G, IPP032N06N3G, IRF1010E, IPP034NE7N3G, IPP037N06L3G, IPP037N08N3G, IPP039N04LG, IPP040N06N3G, IPP041N04NG, IPP041N12N3G, IPP042N03LG