IPP037N06L3G MOSFET PDF: N-Ch, 60V, 90A. Datasheet. Full specification with pinout and replacement list

IPP037N06L3G Specs and Replacement

   Type Designator: IPP037N06L3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO220

IPP037N06L3G substitution

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IPP037N06L3G datasheet

..1. Size:475K infineon
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf pdf_icon

Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Product Summary OptiMOS 3 Power-Transistor V 60 V DS Features R 3.4 m DS(on),max (SMD) Ideal for high frequency switching and sync. rec. I 90 A D Optimized technology for DC/DC converters previous engineering Excellent gate charge x R product (FOM) DS(on) sample codes Very low on-resistance RDS(on) IPP04xN06... See More ⇒

3.1. Size:246K inchange semiconductor
ipp037n06l3.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP037N06L3 IIPP037N06L3 FEATURES Static drain-source on-resistance RDS(on) 3.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M... See More ⇒

6.1. Size:1018K infineon
ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf pdf_icon

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I 1 D Q H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 + D n) #) ' ' ! Q ' 381>>5?B=1... See More ⇒

6.2. Size:494K infineon
ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf pdf_icon

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested ... See More ⇒