All MOSFET. APT8075BVR Datasheet

 

APT8075BVR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT8075BVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO247

 APT8075BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT8075BVR Datasheet (PDF)

 ..1. Size:62K  apt
 apt8075bvr.pdf

APT8075BVR APT8075BVR

APT8075BVR800V 12A 0.750POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 ..2. Size:376K  inchange semiconductor
 apt8075bvr.pdf

APT8075BVR APT8075BVR

isc N-Channel MOSFET Transistor APT8075BVRFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 5.1. Size:52K  apt
 apt8075bvfrg.pdf

APT8075BVR APT8075BVR

APT8075BVFR800V 12A 0.750POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 5.2. Size:72K  apt
 apt8075bvfr.pdf

APT8075BVR APT8075BVR

APT8075BVFR800V 12A 0.750POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 6.1. Size:50K  apt
 apt8075bn.pdf

APT8075BVR APT8075BVR

DTO-247GAPT8075BN 800V 13.0A 0.75SAPT8090BN 800V 12.0A 0.90POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 8075BN 8090BN UNITVDSS Drain-Source Voltage800 800 VoltsID Continuous Drain Current @ TC = 25C13 12AmpsIDM Pulsed Drain Current 156 48V

Datasheet: APT8056BVR , APT8058HVR , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , IRF3710 , BF1100 , BF1100R , BF1100WR , BF1101 , BF1101R , BF1101WR , BF1102 , BF1105 .

 

 
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