APT8075BVR Specs and Replacement

Type Designator: APT8075BVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO247

APT8075BVR substitution

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APT8075BVR datasheet

 ..1. Size:62K  apt
 apt8075bvr.pdf pdf_icon

APT8075BVR

APT8075BVR 800V 12A 0.750 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

 ..2. Size:376K  inchange semiconductor
 apt8075bvr.pdf pdf_icon

APT8075BVR

isc N-Channel MOSFET Transistor APT8075BVR FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.75 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 5.1. Size:52K  apt
 apt8075bvfrg.pdf pdf_icon

APT8075BVR

APT8075BVFR 800V 12A 0.750 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test... See More ⇒

 5.2. Size:72K  apt
 apt8075bvfr.pdf pdf_icon

APT8075BVR

APT8075BVFR 800V 12A 0.750 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test... See More ⇒

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Detailed specifications: APT8056BVR, APT8058HVR, APT8065AVR, APT8065BVFR, APT8065BVR, APT8065SVR, APT8067HVR, APT8075BN, IRFP260N, BF1100, BF1100R, BF1100WR, BF1101, BF1101R, BF1101WR, BF1102, BF1105

Keywords - APT8075BVR MOSFET specs

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