All MOSFET. IPP042N03LG Datasheet

 

IPP042N03LG Datasheet and Replacement


   Type Designator: IPP042N03LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO220
 

 IPP042N03LG substitution

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IPP042N03LG Datasheet (PDF)

 4.1. Size:612K  infineon
 ipp042n03l .pdf pdf_icon

IPP042N03LG

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 4.2. Size:611K  infineon
 ipp042n03l.pdf pdf_icon

IPP042N03LG

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 4.3. Size:246K  inchange semiconductor
 ipp042n03l.pdf pdf_icon

IPP042N03LG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP042N03LIIPP042N03LFEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

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Datasheet: IPP034N03LG , IPP034NE7N3G , IPP037N06L3G , IPP037N08N3G , IPP039N04LG , IPP040N06N3G , IPP041N04NG , IPP041N12N3G , IRFP450 , IPP045N10N3G , IPP048N04NG , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG .

History: CED3252 | HRP100N08K | HRD72N06K | HRP80N06K

Keywords - IPP042N03LG MOSFET datasheet

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