IPP042N03LG Specs and Replacement

Type Designator: IPP042N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.6 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO220

IPP042N03LG substitution

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IPP042N03LG datasheet

 4.1. Size:612K  infineon
 ipp042n03l .pdf pdf_icon

IPP042N03LG

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 4.2. Size:611K  infineon
 ipp042n03l.pdf pdf_icon

IPP042N03LG

pe %% # ! % # ! F % (>.;?6?@ %>E Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- 4 m - @? >2H Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 7 D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Q "2=@86... See More ⇒

 4.3. Size:246K  inchange semiconductor
 ipp042n03l.pdf pdf_icon

IPP042N03LG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP042N03L IIPP042N03L FEATURES Static drain-source on-resistance RDS(on) 4.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE ... See More ⇒

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Detailed specifications: IPP034N03LG, IPP034NE7N3G, IPP037N06L3G, IPP037N08N3G, IPP039N04LG, IPP040N06N3G, IPP041N04NG, IPP041N12N3G, IRFP450, IPP045N10N3G, IPP048N04NG, IPP048N12N3G, IPP04CN10NG, IPP04N03LBG, IPP052N06L3G, IPP052NE7N3G, IPP055N03LG

Keywords - IPP042N03LG MOSFET specs

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