IPP042N03LG
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP042N03LG
Marking Code: 042N03L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 79
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 38
nC
trⓘ - Rise Time: 5.6
nS
Cossⓘ -
Output Capacitance: 1100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042
Ohm
Package:
TO220
IPP042N03LG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP042N03LG
Datasheet (PDF)
4.1. Size:612K infineon
ipp042n03l .pdf 
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4.2. Size:611K infineon
ipp042n03l.pdf
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4.3. Size:246K inchange semiconductor
ipp042n03l.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP042N03LIIPP042N03LFEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE
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