All MOSFET. IPP048N04NG Datasheet

 

IPP048N04NG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP048N04NG
   Marking Code: 048N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO220

 IPP048N04NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP048N04NG Datasheet (PDF)

 4.1. Size:565K  infineon
 ipp048n04n.pdf

IPP048N04NG IPP048N04NG

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 4.2. Size:246K  inchange semiconductor
 ipp048n04n.pdf

IPP048N04NG IPP048N04NG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP048N04NIIPP048N04NFEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

 5.1. Size:2138K  cn vbsemi
 ipp048n04.pdf

IPP048N04NG IPP048N04NG

IPP048N04www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0055 at VGS = 10 V 100COMPLIANT 40 130 nC0.0070 at VGS = 4.5 V 90APPLICATIONS Synchronous RectificationTO-220AB Power SuppliesDGSG D STop ViewN-Channel MOSFETABSOLUT

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