IPP048N04NG Datasheet and Replacement. Cross Reference Search

IPP048N04NG Datasheet (PDF)

4.1. Size:565K infineon
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4.2. Size:246K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP048N04NIIPP048N04NFEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

5.1. Size:2138K cn vbsemi
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IPP048N04www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0055 at VGS = 10 V 100COMPLIANT 40 130 nC0.0070 at VGS = 4.5 V 90APPLICATIONS Synchronous RectificationTO-220AB Power SuppliesDGSG D STop ViewN-Channel MOSFETABSOLUT

Datasheet: IPP037N06L3G , IPP037N08N3G , IPP039N04LG , IPP040N06N3G , IPP041N04NG , IPP041N12N3G , IPP042N03LG , IPP045N10N3G , P60NF06 , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , IPP057N06N3G , IPP057N08N3G .