IPP048N04NG Specs and Replacement

Type Designator: IPP048N04NG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: TO220

IPP048N04NG substitution

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IPP048N04NG datasheet

 4.1. Size:565K  infineon
 ipp048n04n.pdf pdf_icon

IPP048N04NG

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 4.2. Size:246K  inchange semiconductor
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IPP048N04NG

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP048N04N IIPP048N04N FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX... See More ⇒

 5.1. Size:2138K  cn vbsemi
 ipp048n04.pdf pdf_icon

IPP048N04NG

IPP048N04 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0055 at VGS = 10 V 100 COMPLIANT 40 130 nC 0.0070 at VGS = 4.5 V 90 APPLICATIONS Synchronous Rectification TO-220AB Power Supplies D G S G D S Top View N-Channel MOSFET ABSOLUT... See More ⇒

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Detailed specifications: IPP037N06L3G, IPP037N08N3G, IPP039N04LG, IPP040N06N3G, IPP041N04NG, IPP041N12N3G, IPP042N03LG, IPP045N10N3G, AO4407, IPP048N12N3G, IPP04CN10NG, IPP04N03LBG, IPP052N06L3G, IPP052NE7N3G, IPP055N03LG, IPP057N06N3G, IPP057N08N3G

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