IPP052NE7N3G Specs and Replacement

Type Designator: IPP052NE7N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 805 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: TO220

IPP052NE7N3G substitution

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IPP052NE7N3G datasheet

 ..1. Size:844K  infineon
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IPP052NE7N3G

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 3.1. Size:835K  infineon
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IPP052NE7N3G

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 3.2. Size:246K  inchange semiconductor
ipp052ne7n3.pdf pdf_icon

IPP052NE7N3G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP052NE7N3 IIPP052NE7N3 FEATURES Static drain-source on-resistance RDS(on) 5.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M... See More ⇒

 7.1. Size:683K  infineon
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IPP052NE7N3G

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Detailed specifications: IPP041N12N3G, IPP042N03LG, IPP045N10N3G, IPP048N04NG, IPP048N12N3G, IPP04CN10NG, IPP04N03LBG, IPP052N06L3G, 2SK3568, IPP055N03LG, IPP057N06N3G, IPP057N08N3G, IPP05CN10LG, IPP05CN10NG, IPP062NE7N3G, IPP065N03LG, IPP065N04NG

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