IPP065N03LG
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP065N03LG
Marking Code: 065N03L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 4.2
nS
Cossⓘ -
Output Capacitance: 720
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
TO220
IPP065N03LG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP065N03LG
Datasheet (PDF)
4.1. Size:614K infineon
ipp065n03l.pdf
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4.2. Size:245K inchange semiconductor
ipp065n03l.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP065N03LIIPP065N03LFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE
6.1. Size:556K infineon
ipp065n04n.pdf
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6.2. Size:738K infineon
ipb065n06lg ipp065n06lg.pdf
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