All MOSFET. IPP065N04NG Datasheet

 

IPP065N04NG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP065N04NG
   Marking Code: 065N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220

 IPP065N04NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP065N04NG Datasheet (PDF)

 4.1. Size:556K  infineon
 ipp065n04n.pdf

IPP065N04NG IPP065N04NG

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 6.1. Size:614K  infineon
 ipp065n03l.pdf

IPP065N04NG IPP065N04NG

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 6.2. Size:738K  infineon
 ipb065n06lg ipp065n06lg.pdf

IPP065N04NG IPP065N04NG

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 6.3. Size:245K  inchange semiconductor
 ipp065n03l.pdf

IPP065N04NG IPP065N04NG

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP065N03LIIPP065N03LFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: APTC90AM60SCTG | AO8806 | FQI27N25 | APT60M75JVR

 

 
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