IPP065N04NG - Даташиты. Аналоги. Основные параметры

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP065N03L IIPP065N03L FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE