All MOSFET. IPP06CN10NG Datasheet

 

IPP06CN10NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPP06CN10NG

Marking Code: 06CN10N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 104 nC

Rise Time (tr): 27 nS

Drain-Source Capacitance (Cd): 1050 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: TO220

IPP06CN10NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP06CN10NG Datasheet (PDF)

4.1. ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf Size:519K _infineon

IPP06CN10NG
IPP06CN10NG

IPB06CN10N G IPI06CN10N GIPP06CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 6.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

4.2. ipp06cn10n.pdf Size:770K _infineon

IPP06CN10NG
IPP06CN10NG

IPB06CN10N G IPI06CN10N GIPP06CN10N G 2 Power-TransistorProduct SummaryFeaturesV 100 VDSR ( 492??6= ?@C>2= =6G6=R 6.2 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on)I 100 ADR /6CJ =@H @? C6D:DE2?46 RDS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7

 5.1. ipp06cn10l1.pdf Size:545K _infineon

IPP06CN10NG
IPP06CN10NG

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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