IPP070N06LG Specs and Replacement
Type Designator: IPP070N06LG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 750 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO220
IPP070N06LG substitution
- MOSFET ⓘ Cross-Reference Search
IPP070N06LG datasheet
ipb070n06ng ipp070n06ng ipi070n06ngrev1.4.pdf
IPB070N06N G IPP070N06N G IPI070N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@B R 7 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C >?A=1... See More ⇒
ipp070n08n3 ipp070n08n3 ipi070n08n3 ipb067n08n3.pdf
IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1... See More ⇒
ipp070n08n3g ipi070n08n3g ipb067n08n3g.pdf
IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1... See More ⇒
Detailed specifications: IPP05CN10LG, IPP05CN10NG, IPP062NE7N3G, IPP065N03LG, IPP065N04NG, IPP065N06LG, IPP06CN10LG, IPP06CN10NG, 2N60, IPP070N06NG, IPP070N08N3G, IPP072N10N3G, IPP075N15N3G, IPP076N12N3G, IPP080N03LG, IPP080N06NG, IPP084N06L3G
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