IPP114N03LG MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP114N03LG
Marking Code: 114N03L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 460 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0114 Ohm
Package: TO220
IPP114N03LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP114N03LG Datasheet (PDF)
ipb114n03l-g ipp114n03l-g.pdf
Type IPP114N03L GIPB114N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 11.4mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
ipp114n03l.pdf
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ipp114n12n3g.pdf
IPP114N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 120 V N-channel, normal levelRDS(on)max 11.4m Excellent gate charge x R product (FOM)DS(on)ID 75 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target application Ideal for
ipp114n12n3.pdf
isc N-Channel MOSFET Transistor IPP114N12N3IIPP114N12N3FEATURESStatic drain-source on-resistance:RDS(on) 11.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2N7002MTF
History: 2N7002MTF
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