IPP114N03LG - описание и поиск аналогов

 4.1. Size:300K  infineon
 ipb114n03l-g ipp114n03l-g.pdf 

Type IPP114N03L G IPB114N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 11.4 m DS(on),max Optimized technology for DC/DC converters I 30 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 4.2. Size:617K  infineon
 ipp114n03l.pdf 

pe %% # ! % # ! % (>.;?6?@ %>E Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- 11 4 m - @? >2H Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4@>A= 2?D Q "2=@86? 7B6

 7.1. Size:304K  infineon
 ipp114n12n3g.pdf 

IPP114N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on)max 11.4 m Excellent gate charge x R product (FOM) DS(on) ID 75 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target application Ideal for

 7.2. Size:245K  inchange semiconductor
 ipp114n12n3.pdf 

isc N-Channel MOSFET Transistor IPP114N12N3 IIPP114N12N3 FEATURES Static drain-source on-resistance RDS(on) 11.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(