IPP12CN10NG
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP12CN10NG
Marking Code: 12CN10N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 67
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 49
nC
trⓘ - Rise Time: 21
nS
Cossⓘ -
Output Capacitance: 489
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0129
Ohm
Package:
TO220
IPP12CN10NG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP12CN10NG
Datasheet (PDF)
..1. Size:858K infineon
ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf 
IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM)DS(on)ID 67 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
4.1. Size:623K infineon
ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf
IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC
4.2. Size:246K inchange semiconductor
ipp12cn10n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP12CN10NIIPP12CN10NFEATURESStatic drain-source on-resistance:RDS(on) 12.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA
5.1. Size:614K infineon
ipp12cn10l-g ips12cn10l-g.pdf
IPS12CN10L GIPP12CN10L GOptiMOS2 Power-TransistorProduct SummaryFeaturesVDS 100 V N-channel, logic levelRDS(on),max 12mW Excellent gate charge x R product (FOM)DS(on)ID 69 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high
5.2. Size:245K inchange semiconductor
ipp12cn10l.pdf
isc N-Channel MOSFET Transistor IPP12CN10LIIPP12CN10LFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: WPB4002
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