All MOSFET. IPP200N15N3G Datasheet

 

IPP200N15N3G Datasheet and Replacement


   Type Designator: IPP200N15N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 214 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO220
 

 IPP200N15N3G substitution

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IPP200N15N3G Datasheet (PDF)

 ..1. Size:993K  infineon
ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf pdf_icon

IPP200N15N3G

IPB200N15N3 G IPD200N15N3 GIPI200N15N3 G IPP200N15N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 20 mW Excellent gate charge x R product (FOM)DS(on)ID 50 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t

 3.1. Size:245K  inchange semiconductor
ipp200n15n3.pdf pdf_icon

IPP200N15N3G

isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high frequency switching and sync. Rec.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 7.1. Size:758K  infineon
ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g ipb200n25n3g ipp200n25n3g ipi200n25n3g.pdf pdf_icon

IPP200N15N3G

IPB200N25N3 G IPP200N25N3 GIPI200N25N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 20mW Excellent gate charge x R product (FOM)DS(on)ID 64 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application

 7.2. Size:244K  inchange semiconductor
ipp200n25n3.pdf pdf_icon

IPP200N15N3G

isc N-Channel MOSFET Transistor IPP200N25N3IIPP200N25N3FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

Datasheet: IPP12CN10LG , IPP12CN10NG , IPP139N08N3G , IPP147N03LG , IPP147N12N3G , IPP16CN10LG , IPP16CN10NG , IPP180N10N3G , IRFP460 , IPP200N25N3G , IPP230N06L3G , IPP260N06N3G , IPP26CN10NG , IPP320N20N3G , IPP35CN10NG , IPP50CN10NG , IPP50R140CP .

History: NVTFS6H880N | SWB088R08E8T

Keywords - IPP200N15N3G MOSFET datasheet

 IPP200N15N3G cross reference
 IPP200N15N3G equivalent finder
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 IPP200N15N3G substitution
 IPP200N15N3G replacement

 

 
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