IPP50R399CP MOSFET Datasheet: N-Ch, 500V, 9A. Full specification with pinout and replacement list

IPP50R399CP Specs and Replacement

Type Designator: IPP50R399CP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm

Package: TO220

IPP50R399CP substitution

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IPP50R399CP datasheet

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isc N-Channel MOSFET Transistor IPP50R399CP IIPP50R399CP FEATURES Static drain-source on-resistance RDS(on) 0.399 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (S... See More ⇒

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