IPP50R399CP Datasheet and Replacement
Type Designator: IPP50R399CP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm
Package: TO220
IPP50R399CP substitution
IPP50R399CP Datasheet (PDF)
ipp50r399cp.pdf
isc N-Channel MOSFET Transistor IPP50R399CPIIPP50R399CPFEATURESStatic drain-source on-resistance:RDS(on) 0.399Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a
ipp50r380ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S
Datasheet: IPP35CN10NG , IPP50CN10NG , IPP50R140CP , IPP50R199CP , IPP50R250CP , IPP50R299CP , IPP50R350CP , IPP50R380CE , 8205A , IPP50R520CP , IPP530N15N3G , IPP600N25N3G , IPP60R099C6 , IPP60R099CP , IPP60R099CPA , IPP60R125C6 , IPP60R125CP .
Keywords - IPP50R399CP MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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