Справочник MOSFET. IPP50R399CP

 

IPP50R399CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP50R399CP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.399 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP50R399CP

 

 

IPP50R399CP Datasheet (PDF)

 ..1. Size:547K  infineon
 ipp50r399cp.pdf

IPP50R399CP IPP50R399CP

IPP50R399CPCIMOSTM #:A0

 ..2. Size:245K  inchange semiconductor
 ipp50r399cp.pdf

IPP50R399CP IPP50R399CP

isc N-Channel MOSFET Transistor IPP50R399CPIIPP50R399CPFEATURESStatic drain-source on-resistance:RDS(on) 0.399Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 7.1. Size:2917K  infineon
 ipp50r380ce.pdf

IPP50R399CP IPP50R399CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S

 7.2. Size:563K  infineon
 ipp50r350cp.pdf

IPP50R399CP IPP50R399CP

IPP50R350CPCIMOSTM #:A0

 7.3. Size:245K  inchange semiconductor
 ipp50r380ce.pdf

IPP50R399CP IPP50R399CP

isc N-Channel MOSFET Transistor IPP50R380CEIIPP50R380CEFEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

 7.4. Size:245K  inchange semiconductor
 ipp50r350cp.pdf

IPP50R399CP IPP50R399CP

isc N-Channel MOSFET Transistor IPP50R350CPIIPP50R350CPFEATURESStatic drain-source on-resistance:RDS(on) 0.35Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top