IPP60R099C6 Datasheet and Replacement
Type Designator: IPP60R099C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 154 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO220
IPP60R099C6 substitution
IPP60R099C6 Datasheet (PDF)
ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe
ipp60r099c6.pdf
isc N-Channel MOSFET Transistor IPP60R099C6IIPP60R099C6FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONProvide all benefits of a fast switching super junction MOS while notSacrificing ease of use
ipp60r099c7.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPP60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPP60R099C7TO-2201 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle a
Datasheet: IPP50R250CP , IPP50R299CP , IPP50R350CP , IPP50R380CE , IPP50R399CP , IPP50R520CP , IPP530N15N3G , IPP600N25N3G , AO3400 , IPP60R099CP , IPP60R099CPA , IPP60R125C6 , IPP60R125CP , IPP60R160C6 , IPP60R165CP , IPP60R190C6 , IPP60R190E6 .
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