IPP60R600CP Datasheet and Replacement
Type Designator: IPP60R600CP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO220
IPP60R600CP substitution
IPP60R600CP Datasheet (PDF)
ipp60r600cp.pdf
IPP60R600CPCIMOSTM #:A0:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compoundPGTO220 :
ipp60r600cp.pdf
isc N-Channel MOSFET Transistor IPP60R600CPIIPP60R600CPFEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a
ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R600C6Data SheetRev. 2.5FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R600C6, IPB60R600C6IPP60R600C6, IPA60R600C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the super
Datasheet: IPP60R380C6 , IPP60R380E6 , IPP60R385CP , IPP60R450E6 , IPP60R520C6 , IPP60R520CP , IPP60R520E6 , IPP60R600C6 , IRF530 , IPP60R600E6 , IPP60R750E6 , IPP60R950C6 , IPP65R280C6 , IPP65R280E6 , IPP65R380C6 , IPP65R380E6 , IPP65R600C6 .
History: VBM1405
Keywords - IPP60R600CP MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: VBM1405
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