IPP65R280E6 Specs and Replacement
Type Designator: IPP65R280E6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220
IPP65R280E6 substitution
- MOSFET ⓘ Cross-Reference Search
IPP65R280E6 datasheet
ipp65r280e6.pdf
isc N-Channel MOSFET Transistor IPP65R280E6 IIPP65R280E6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL... See More ⇒
ipa65r280c6 ipb65r280c6 ipi65r280c6 ipp65r280c6 ipw65r280c6.pdf
MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/... See More ⇒
Detailed specifications: IPP60R520CP, IPP60R520E6, IPP60R600C6, IPP60R600CP, IPP60R600E6, IPP60R750E6, IPP60R950C6, IPP65R280C6, IRFP450, IPP65R380C6, IPP65R380E6, IPP65R600C6, IPP65R600E6, IPP65R660CFD, IPP70N04S4-06, IPP80CN10NG, IPP80N04S4-03
Keywords - IPP65R280E6 MOSFET specs
IPP65R280E6 cross reference
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IPP65R280E6 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: STP77N6F6
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