IPP65R280E6 Datasheet and Replacement
Type Designator: IPP65R280E6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 13.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220
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IPP65R280E6 Datasheet (PDF)
ipp65r280e6.pdf

isc N-Channel MOSFET Transistor IPP65R280E6IIPP65R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL
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MO Met l Oxi e emi n t iel e t n i t C lMO C665 C lMO C6 e n i t I x65 280C6D t eetRev. 2.1 in l e M n ement & M ltim ket , ==:$&)G '=D3?*?/
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AFP8803 | DMNH10H028SCT | IRLS4030 | SWI1N60 | HM4805B | DMN4031SSDQ | WML11N80M3
Keywords - IPP65R280E6 MOSFET datasheet
IPP65R280E6 cross reference
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History: AFP8803 | DMNH10H028SCT | IRLS4030 | SWI1N60 | HM4805B | DMN4031SSDQ | WML11N80M3



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