All MOSFET. IPP65R280E6 Datasheet

 

IPP65R280E6 Datasheet and Replacement


   Type Designator: IPP65R280E6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220
 

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IPP65R280E6 Datasheet (PDF)

 ..1. Size:1885K  infineon
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IPP65R280E6

MOSFET+

 ..2. Size:245K  inchange semiconductor
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IPP65R280E6

isc N-Channel MOSFET Transistor IPP65R280E6IIPP65R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

 5.1. Size:2104K  infineon
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IPP65R280E6

MOSFET+

 5.2. Size:1337K  infineon
 ipa65r280c6 ipb65r280c6 ipi65r280c6 ipp65r280c6 ipw65r280c6.pdf pdf_icon

IPP65R280E6

MO Met l Oxi e emi n t iel e t n i t C lMO C665 C lMO C6 e n i t I x65 280C6D t eetRev. 2.1 in l e M n ement & M ltim ket , ==:$&)G '=D3?*?/

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Datasheet: IPP60R520CP , IPP60R520E6 , IPP60R600C6 , IPP60R600CP , IPP60R600E6 , IPP60R750E6 , IPP60R950C6 , IPP65R280C6 , IRF1407 , IPP65R380C6 , IPP65R380E6 , IPP65R600C6 , IPP65R600E6 , IPP65R660CFD , IPP70N04S4-06 , IPP80CN10NG , IPP80N04S4-03 .

History: IXTH30N25 | IXFT80N10 | 2SK1808 | GP2M002A060XG | DAMH300N150 | MSD4N60 | AP04N60S-H-HF

Keywords - IPP65R280E6 MOSFET datasheet

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