IPP65R280E6 Datasheet and Replacement
Type Designator: IPP65R280E6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220
IPP65R280E6 substitution
IPP65R280E6 Datasheet (PDF)
ipp65r280e6.pdf
isc N-Channel MOSFET Transistor IPP65R280E6IIPP65R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL
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Datasheet: IPP60R520CP , IPP60R520E6 , IPP60R600C6 , IPP60R600CP , IPP60R600E6 , IPP60R750E6 , IPP60R950C6 , IPP65R280C6 , IRFP450 , IPP65R380C6 , IPP65R380E6 , IPP65R600C6 , IPP65R600E6 , IPP65R660CFD , IPP70N04S4-06 , IPP80CN10NG , IPP80N04S4-03 .
Keywords - IPP65R280E6 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRFS9643 | IRFSZ30
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