IPP65R280E6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP65R280E6
Marking Code: 65E6280
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 13.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220
IPP65R280E6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP65R280E6 Datasheet (PDF)
ipp65r280e6.pdf
isc N-Channel MOSFET Transistor IPP65R280E6IIPP65R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL
ipa65r280c6 ipb65r280c6 ipi65r280c6 ipp65r280c6 ipw65r280c6.pdf
MO Met l Oxi e emi n t iel e t n i t C lMO C665 C lMO C6 e n i t I x65 280C6D t eetRev. 2.1 in l e M n ement & M ltim ket , ==:$&)G '=D3?*?/
ipp65r280c6.pdf
isc N-Channel MOSFET Transistor IPP65R280C6IIPP65R280C6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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