All MOSFET. IPP90R1K0C3 Datasheet

 

IPP90R1K0C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPP90R1K0C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 89 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 5.7 A

Total Gate Charge (Qg): 34 nC

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO220

IPP90R1K0C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP90R1K0C3 Datasheet (PDF)

1.1. ipp90r1k0c3 1[1].0.pdf Size:287K _infineon

IPP90R1K0C3
IPP90R1K0C3

IPP90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 1.0 ? DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for:

2.1. ipp90r1k2c3 1[1].0.pdf Size:293K _infineon

IPP90R1K0C3
IPP90R1K0C3

IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25C 1.2 ? DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for: Qu

 4.1. ipp90r500c3 1[1].0.pdf Size:292K _infineon

IPP90R1K0C3
IPP90R1K0C3

IPP90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 0.5 ? DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V is designed for:

4.2. ipp90r340c3 1[1].0.pdf Size:286K _infineon

IPP90R1K0C3
IPP90R1K0C3

IPP90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25C 0.34 ? DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Worldwide best R in TO220 DS,on Ultra low gate charge

 4.3. ipp90r800c3 1[1].0.pdf Size:286K _infineon

IPP90R1K0C3
IPP90R1K0C3

IPP90R800C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 0.8 ? DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Ultra low gate charge CoolMOS 900V is designed for:

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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