IPP90R1K0C3 - описание и поиск аналогов

 ..1. Size:287K  infineon
 ipp90r1k0c3.pdf 

IPP90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 1.0 DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 90

 6.1. Size:293K  infineon
 ipp90r1k2c3.pdf 

IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V

 8.1. Size:292K  infineon
 ipp90r500c3.pdf 

IPP90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.5 DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 90

 8.2. Size:286K  infineon
 ipp90r340c3.pdf 

IPP90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 0.34 DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Worldwide best R in TO220 DS,on

 8.3. Size:286K  infineon
 ipp90r800c3.pdf 

IPP90R800C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.8 DS(on),max J Extreme dv/dt rated Q 42 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Ultra low gate charge CoolMOS 90

 8.4. Size:246K  inchange semiconductor
 ipp90r500c3.pdf 

isc N-Channel MOSFET Transistor IPP90R500C3 IIPP90R500C3 FEATURES Static drain-source on-resistance RDS(on) 0.5 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.5. Size:245K  inchange semiconductor
 ipp90r340c3.pdf 

isc N-Channel MOSFET Transistor IPP90R340C3 IIPP90R340C3 FEATURES Static drain-source on-resistance RDS(on) 0.34 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.6. Size:260K  inchange semiconductor
 ipp90r800c3.pdf 

isc N-Channel MOSFET Transistor IPP90R800C3 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL