IPP90R340C3 Specs and Replacement

Type Designator: IPP90R340C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm

Package: TO220

IPP90R340C3 substitution

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IPP90R340C3 datasheet

 ..1. Size:286K  infineon
ipp90r340c3.pdf pdf_icon

IPP90R340C3

IPP90R340C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 0.34 DS(on),max J Extreme dv/dt rated Q 94 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220 Worldwide best R in TO220 DS,on ... See More ⇒

 ..2. Size:245K  inchange semiconductor
ipp90r340c3.pdf pdf_icon

IPP90R340C3

isc N-Channel MOSFET Transistor IPP90R340C3 IIPP90R340C3 FEATURES Static drain-source on-resistance RDS(on) 0.34 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 8.1. Size:293K  infineon
ipp90r1k2c3.pdf pdf_icon

IPP90R340C3

IPP90R1K2C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @T =25 C 1.2 DS(on),max J Extreme dv/dt rated Q 28 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 900V... See More ⇒

 8.2. Size:292K  infineon
ipp90r500c3.pdf pdf_icon

IPP90R340C3

IPP90R500C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 0.5 DS(on),max J Extreme dv/dt rated Q 68 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate charge CoolMOS 90... See More ⇒

Detailed specifications: IPP65R600C6, IPP65R600E6, IPP65R660CFD, IPP70N04S4-06, IPP80CN10NG, IPP80N04S4-03, IPP90R1K0C3, IPP90R1K2C3, SI2302, IPP90R500C3, IPP90R800C3, IPS031N03LG, IPS040N03LG, IPS050N03LG, IPS060N03LG, IPS075N03LG, IPS090N03LG

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