IPP90R340C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPP90R340C3
Маркировка: 9R340C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 208 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 94 nC
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 120 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.34 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP90R340C3
IPP90R340C3 Datasheet (PDF)
ipp90r340c3.pdf
IPP90R340C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 0.34DS(on),max J Extreme dv/dt ratedQ 94 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 Worldwide best R in TO220DS,on
ipp90r340c3.pdf
isc N-Channel MOSFET Transistor IPP90R340C3IIPP90R340C3FEATURESStatic drain-source on-resistance:RDS(on) 0.34Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeABSOLUTE MAXIMUM RATINGS(T =25)a
ipp90r1k2c3.pdf
IPP90R1K2C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @T =25C 1.2DS(on),max J Extreme dv/dt ratedQ 28 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate chargeCoolMOS 900V
ipp90r500c3.pdf
IPP90R500C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.5DS(on),max J Extreme dv/dt ratedQ 68 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate chargeCoolMOS 90
ipp90r800c3.pdf
IPP90R800C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 0.8DS(on),max J Extreme dv/dt ratedQ 42 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220 Ultra low gate chargeCoolMOS 90
ipp90r1k0c3.pdf
IPP90R1K0C3CoolMOS Power TransistorProduct SummaryFeaturesV @ T =25C 900 VDS J Lowest figure-of-merit RON x QgR @ T = 25C 1.0DS(on),max J Extreme dv/dt ratedQ 34 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220 Pb-free lead plating; RoHS compliant Ultra low gate chargeCoolMOS 90
ipp90r500c3.pdf
isc N-Channel MOSFET Transistor IPP90R500C3IIPP90R500C3FEATURESStatic drain-source on-resistance:RDS(on) 0.5Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeABSOLUTE MAXIMUM RATINGS(T =25)a
ipp90r800c3.pdf
isc N-Channel MOSFET Transistor IPP90R800C3FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
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