IPS040N03LG Specs and Replacement

Type Designator: IPS040N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.8 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO251

IPS040N03LG substitution

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IPS040N03LG datasheet

 ..1. Size:898K  infineon
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IPS040N03LG

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 4.1. Size:912K  infineon
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IPS040N03LG

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 4.2. Size:261K  inchange semiconductor
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IPS040N03LG

isc N-Channel MOSFET Transistor IPS040N03L FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

 9.1. Size:92K  international rectifier
ips042g.pdf pdf_icon

IPS040N03LG

Data Sheet No.PD 60153-J IPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features Product Summary Over temperature shutdown Over current shutdown Rds(on) 500m (max) Active clamp Low current & logic level input E.S.D protection V clamp 50V Ishutdown 2A Description Ton/Toff 1.5 s The IPS042G is a fully protected dual low side SMART POWER MOSFET that feature... See More ⇒

Detailed specifications: IPP80CN10NG, IPP80N04S4-03, IPP90R1K0C3, IPP90R1K2C3, IPP90R340C3, IPP90R500C3, IPP90R800C3, IPS031N03LG, IRF520, IPS050N03LG, IPS060N03LG, IPS075N03LG, IPS090N03LG, IPS105N03LG, IPS110N12N3G, IPS118N10NG, IPS12CN10LG

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