All MOSFET. IPS040N03LG Datasheet

 

IPS040N03LG Datasheet and Replacement


   Type Designator: IPS040N03LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO251
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IPS040N03LG Datasheet (PDF)

 ..1. Size:898K  infineon
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IPS040N03LG

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 4.1. Size:912K  infineon
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IPS040N03LG

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 4.2. Size:261K  inchange semiconductor
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IPS040N03LG

isc N-Channel MOSFET Transistor IPS040N03LFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.1. Size:92K  international rectifier
ips042g.pdf pdf_icon

IPS040N03LG

Data Sheet No.PD 60153-JIPS042GDUAL FULLY PROTECTED POWER MOSFET SWITCHFeatures Product Summary Over temperature shutdown Over current shutdownRds(on) 500m (max) Active clamp Low current & logic level input E.S.D protectionV clamp 50VIshutdown 2ADescriptionTon/Toff 1.5sThe IPS042G is a fully protected dual low side SMARTPOWER MOSFET that feature

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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