All MOSFET. IPS060N03LG Datasheet

 

IPS060N03LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPS060N03LG
   Marking Code: 060N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11.3 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO251

 IPS060N03LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPS060N03LG Datasheet (PDF)

 ..1. Size:523K  infineon
 ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf

IPS060N03LG IPS060N03LG

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very lo

 4.1. Size:1017K  infineon
 ips060n03l.pdf

IPS060N03LG IPS060N03LG

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 4.2. Size:634K  infineon
 ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf

IPS060N03LG IPS060N03LG

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

 9.1. Size:420K  infineon
 ipd06n03la ipf06n03la ips06n03la ipu06n03la.pdf

IPS060N03LG IPS060N03LG

IPD06N03LA IPF06N03LAIPS06N03LA IPU06N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C

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