All MOSFET. IPS110N12N3G Datasheet

 

IPS110N12N3G Datasheet and Replacement


   Type Designator: IPS110N12N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 408 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO251
 

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IPS110N12N3G Datasheet (PDF)

 ..1. Size:587K  infineon
ipds110n12n3g ips110n12n3g ips110n12n3 ipd110n12n3.pdf pdf_icon

IPS110N12N3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, 120VOptiMOS 3 Power-TransistorIPD_S110N12N3 GData SheetRev. 2.4FinalIndustrial & MultimarketIPD110N12N3 G IPS110N12N3 GOptiMOSTM3Power-TransistorProduct SummaryFeaturesVDS 120 V N-channel, normal levelRDS(on),max11m Excellent gate charge x R product (FOM)DS(on)

 3.1. Size:261K  inchange semiconductor
ips110n12n3.pdf pdf_icon

IPS110N12N3G

isc N-Channel MOSFET Transistor IPS110N12N3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.1. Size:570K  infineon
ips118n10n.pdf pdf_icon

IPS110N12N3G

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Datasheet: IPP90R800C3 , IPS031N03LG , IPS040N03LG , IPS050N03LG , IPS060N03LG , IPS075N03LG , IPS090N03LG , IPS105N03LG , AO3401 , IPS118N10NG , IPS12CN10LG , IPS135N03LG , IPS50R520CP , IPU039N03LG , IPU050N03LG , IPU060N03LG , IPU075N03LG .

History: FTK2N65P

Keywords - IPS110N12N3G MOSFET datasheet

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